Functional nano-structuring of thin silicon nitride membranes

The paper describes the development and production of a nano-optical device consisting of a nano-perforated layer of silicon nitride stretched in a single-crystal silicon frame using electron beam lithography (EBL) and reactive ion etching (RIE) techniques. Procedures for transferring nanostructures to the nitride layer are described, starting with the preparation of a metallic mask layer by physical vapor deposition (PVD), high-resolution pattern recording technique using EBL and the transfer of the motif into the functional layer using the RIE technique. Theoretical aspects are summarized including technological issues, achieved results and application potential of patterned silicon nitride membranes.

Keywords

membrane, nano optical device, electron optics, electron beam lithography, silicon nitride, reactive ion etching, silicon etching, microfabrication

Citation

Journal of Electrical Engineering . 2020, vol. 71, issue 2, p. 127-130.
https://www.sciendo.com/article/10.2478/jee-2020-0019

Document type

Peer-reviewed

Document version

Published version

Language of document

en

Document licence

Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
http://creativecommons.org/licenses/by-nc-nd/4.0/