Universal Power Sequencer For Rf Power Amplifiers
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Date
2020
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Mark
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Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Abstract
More often used Galium Nitride (GaN) based Radio-Frequency high power transistors in the various RF PA configurations e.g. Doherty is by their nature easily destroyed, great care must be taken, when powering-up and shutting down this circuits. That means, proper power biasing and sequencing is necessary. The Doherty type RF PA with RF drivers four different gate, drain voltages and time when the individual voltages are turned on or off must be controled. Universal power sequencer and biasing device, which meets this requirements is described in this article.
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Proceedings II of the 26st Conference STUDENT EEICT 2020: Selected Papers. s. 126-130. ISBN 978-80-214-5868-0
https://conf.feec.vutbr.cz/eeict/EEICT2020
https://conf.feec.vutbr.cz/eeict/EEICT2020
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en
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© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií