A novel temperature controller for in-situ measurement of radiation-induced changes in temperature effects on space electronics
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Date
2019-07-15
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Mark
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FEI STU Bratislava
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Abstract
The paper discusses a novel temperature controller and a related test method allowing in-situ measurement of totalionising dose-induced changes in the impact of temperatureon electronic devices for space applications. Various results ofpilot radiation experiments (testing commercial PMOS transistors, RADFETs, and voltage references) are also presented.
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Citation
Journal of Electrical Engineering
. 2019, vol. 70, issue 3, p. 227-235.
http://iris.elf.stuba.sk/JEEEC/data/pdf/3_119-06.pdf
http://iris.elf.stuba.sk/JEEEC/data/pdf/3_119-06.pdf
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Peer-reviewed
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en
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Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
http://creativecommons.org/licenses/by-nc-nd/4.0/
http://creativecommons.org/licenses/by-nc-nd/4.0/