Intrinsic And Extrinsic Parameters Of Galium - Nitride Transistors

Herceg, Erik

Intrinsic And Extrinsic Parameters Of Galium - Nitride Transistors

but.event.date	23.04.2020	cs
but.event.title	Student EEICT 2020	cs
dc.contributor.author	Herceg, Erik
dc.date.accessioned	2021-07-15T11:17:21Z
dc.date.available	2021-07-15T11:17:21Z
dc.date.issued	2020	cs
dc.description.abstract	This article deals with the extrinsic and intrinsic parameters of the Galium-Nitride RF transistor. These parameters are essential in any design of large-signal analysis of RF amplifiers. Package parasitics are the biggest problem of integrated circuits (ICs), especially at high frequencies. Each IC package gives unwanted parasitics to the primary function of the IC. The analysis of these package parasitics can be performed by the transistor manufacturer, which provides a non-linear model of the transistor, where parasitics elements are separated from the transistor. With these separated package parasitics, the highest efficiency, power output, and accurate harmonic termination can be achieved. The main purpose of this article is to describe these problems.	en
dc.format	text	cs
dc.format.extent	314-318	cs
dc.format.mimetype	application/pdf	en
dc.identifier.citation	Proceedings I of the 26st Conference STUDENT EEICT 2020: General papers. s. 314-318. ISBN 978-80-214-5867-3	cs
dc.identifier.isbn	978-80-214-5867-3
dc.identifier.uri	http://hdl.handle.net/11012/200586
dc.language.iso	en	cs
dc.publisher	Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií	cs
dc.relation.ispartof	Proceedings I of the 26st Conference STUDENT EEICT 2020: General papers	en
dc.relation.uri	https://conf.feec.vutbr.cz/eeict/EEICT2020	cs
dc.rights	© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií	cs
dc.rights.access	openAccess	en
dc.subject	GaN Transistor	en
dc.subject	Waveforms	en
dc.subject	Extrinsic	en
dc.subject	Intrinsic	en
dc.subject	Load-Pull	en
dc.subject	Source-Pull	en
dc.subject	Radio-Frequency	en
dc.subject	Transistor Parasitics	en
dc.title	Intrinsic And Extrinsic Parameters Of Galium - Nitride Transistors	en
dc.type.driver	conferenceObject	en
dc.type.status	Peer-reviewed	en
dc.type.version	publishedVersion	en
eprints.affiliatedInstitution.department	Fakulta elektrotechniky a komunikačních technologií	cs

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