Hysteresis versus PSM of ideal memristors, memcapacitors, and meminductors

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dc.contributor.authorBiolek, Zdeněkcs
dc.contributor.authorBiolek, Daliborcs
dc.contributor.authorBiolková, Vieracs
dc.coverage.issue20cs
dc.coverage.volume52cs
dc.date.accessioned2021-12-10T11:52:15Z
dc.date.available2021-12-10T11:52:15Z
dc.date.issued2016-09-30cs
dc.description.abstractThe classical fingerprint of the ideal memristor with differentiable constitutive relation has recently been extended with a piece of knowledge that the area of the pinched hysteresis loop of a memristor driven by sinusoidal signal with fixed amplitude and increasing frequency disappears with an integer power of the frequency. This fingerprint is extended to the memcapacitor and meminductor, and it is also shown that the way the hysteresis disappears can be determined directly from the behaviour of the parameter versus state map (PSM) of the element in the neighbourhood of the initial operating point.en
dc.formattextcs
dc.format.extent1669-1670cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationElectronics Letters. 2016, vol. 52, issue 20, p. 1669-1670.en
dc.identifier.doi10.1049/el.2016.2138cs
dc.identifier.issn0013-5194cs
dc.identifier.other129543cs
dc.identifier.urihttp://hdl.handle.net/11012/203148
dc.language.isoencs
dc.publisherIET, The Institution of Engineering and Technologycs
dc.relation.ispartofElectronics Letterscs
dc.relation.urihttps://ietresearch.onlinelibrary.wiley.com/doi/10.1049/el.2016.2138cs
dc.rightsCreative Commons Attribution 3.0 Unportedcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/0013-5194/cs
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/cs
dc.subjectmemristorsen
dc.subjecthysteresisen
dc.subjectPSMen
dc.subjectideal memristorsen
dc.subjectmemcapacitorsen
dc.subjectmeminductorsen
dc.subjectdifferentiable constitutive relationen
dc.subjectpinched hysteresis loopen
dc.subjectsinusoidal signalen
dc.subjectinteger poweren
dc.subjectfingerprinten
dc.subjectparameter versus state mapen
dc.titleHysteresis versus PSM of ideal memristors, memcapacitors, and meminductorsen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-129543en
sync.item.dbtypeVAVen
sync.item.insts2021.12.10 12:52:15en
sync.item.modts2021.12.10 12:14:29en
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. Ústav mikroelektronikycs
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. Ústav radioelektronikycs
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