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  • Modeling the AgInSbTe Memristor 

    Yu, J.; Li, Y.; Mu, X.; Zhang, J.; Miao, X.; Wang, S. (Společnost pro radioelektronické inženýrství, 2015-09)
    The AgInSbTe memristor shows gradual resistance tuning characteristics, which makes it a potential candidate to emulate biological plastic synapses. The working mechanism of the device is complex, and both intrinsic ...