Dark J–V Characteristics Model Of Chalcopyrite-Based Solar Cells
Abstract
An equivalent circuit model of the current parasitic pathways is proposed to describe a behaviour of dark current density–voltage characteristics of chalcopyrite-based solar cells in order to understand a shunting behaviour between the ZnO:Al/i-ZnO/CdS/Cu(In;Ga)Se2/MoSe2/Mo/Ti/TiN layers. The model fitting with a parameter extraction is evaluated for the sample before and after an appearance of a permanent breakdown to prove an accurate response of the proposed model to an ohmic and non-ohmic component shift.
Keywords
dark J–V characteristics, parasitic current pathways, heterojunction, CIGS, solar cell, thin-film, equivalent electrical model, parameters extractionPersistent identifier
http://hdl.handle.net/11012/138290Document type
Peer reviewedDocument version
Final PDFSource
Proceedings of the 24th Conference STUDENT EEICT 2018. s. 528-532. ISBN 978-80-214-5614-3http://www.feec.vutbr.cz/EEICT/
Collections
- Student EEICT 2018 [157]