Dark J–V Characteristics Model Of Chalcopyrite-Based Solar Cells
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An equivalent circuit model of the current parasitic pathways is proposed to describe a behaviour of dark current density–voltage characteristics of chalcopyrite-based solar cells in order to understand a shunting behaviour between the ZnO:Al/i-ZnO/CdS/Cu(In;Ga)Se2/MoSe2/Mo/Ti/TiN layers. The model fitting with a parameter extraction is evaluated for the sample before and after an appearance of a permanent breakdown to prove an accurate response of the proposed model to an ohmic and non-ohmic component shift.
Keywordsdark J–V characteristics, parasitic current pathways, heterojunction, CIGS, solar cell, thin-film, equivalent electrical model, parameters extraction
Document typePeer reviewed
Document versionFinal PDF
SourceProceedings of the 24th Conference STUDENT EEICT 2018. s. 528-532. ISBN 978-80-214-5614-3
- Student EEICT 2018