0.3V Bulk-driven current conveyor
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Date
2019-05-15
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Advisor
Referee
Mark
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Volume Title
Publisher
IEEE
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Abstract
This paper presents the design and the experimental results of a sub 0.5 V bulk-driven (BD) current conveyor (CCII) using 0.18 µm TSMC CMOS technology with total chip area of 0.0134 mm2. All transistors are biased in subthreshold region for low-voltage low-power operation and the input transistors are controlled from their bulk terminals for rail-to-rail input voltage range. The circuit is designed to work with voltage supply (VDD = 0.3V) which is much lower than the threshold voltage of the MOS transistor (VTH=0.5V) while consuming 19 nW of power. The measurement results confirm the proper function of the proposed circuit.
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Citation
IEEE Access. 2019, vol. 7, issue 1, IF: 4.098, p. 65122-65128.
https://ieeexplore.ieee.org/document/8715344
https://ieeexplore.ieee.org/document/8715344
Document type
Peer-reviewed
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Published version
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en