Characterization Of Aln Thin Films Deposited On Thermally Processed Silicon Substrates Using Pe-Ald
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2019
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Mark
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Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Abstract
The aim of this work is to study topography and chemical composition of AlN thin films deposited on Si substrates previously exposed to various time of thermal processing using plasma-enhanced atomic layer deposition technique. The samples were heated up to 500 °C for the period of 2 and 4 hours. Chemical composition of wafers and the films obtained are provided by Xray photoelectron spectroscopy (XPS). Surface topography was investigated using atomic force microscopy (AFM).
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Proceedings of the 25st Conference STUDENT EEICT 2019. s. 704-708. ISBN 978-80-214-5735-5
http://www.feec.vutbr.cz/EEICT/
http://www.feec.vutbr.cz/EEICT/
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en
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© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií