Characterization Of Aln Thin Films Deposited On Thermally Processed Silicon Substrates Using Pe-Ald
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The aim of this work is to study topography and chemical composition of AlN thin films deposited on Si substrates previously exposed to various time of thermal processing using plasma-enhanced atomic layer deposition technique. The samples were heated up to 500 °C for the period of 2 and 4 hours. Chemical composition of wafers and the films obtained are provided by Xray photoelectron spectroscopy (XPS). Surface topography was investigated using atomic force microscopy (AFM).
Keywordsaluminum nitride, atomic layer deposition, atomic force microscopy, Si single crystal wafers, topography, x-ray photoelectron spectroscopy
Document typePeer reviewed
Document versionFinal PDF
SourceProceedings of the 25st Conference STUDENT EEICT 2019. s. 704-708. ISBN 978-80-214-5735-5
- Student EEICT 2019