Tantalum Capacitor As A Mis Structure: Transport Characteristics Temperature Dependencies
Alternative metrics PlumXhttp://hdl.handle.net/11012/187182
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Temperature dependencies of a leakage current in normal mode are explained on the basis of a model, in which the solid state tantalum capacitor is considered as a metal-insulatorsemiconductor (MIS) heterostructure. The measurement was performed in temperature range from 105 to 155°C. Ohmic conductivity increases exponentially with increasing temperature with activation energy 0.94 eV. Tunneling voltage parameter and tunneling energy barrier decreases with increasing temperature, reaching values 0.45 to 0.26 eV.
Keywordstantalum capacitor, MIS structure, I-V characteristics, tunneling energy barrier, activation energy
Document typePeer reviewed
SourceProceedings of the 25st Conference STUDENT EEICT 2019. s. 645-649. ISBN 978-80-214-5735-5
- Student EEICT 2017