Tantalum Capacitor As A Mis Structure: Transport Characteristics Temperature Dependencies
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Date
2017
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Mark
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Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Abstract
Temperature dependencies of a leakage current in normal mode are explained on the basis of a model, in which the solid state tantalum capacitor is considered as a metal-insulatorsemiconductor (MIS) heterostructure. The measurement was performed in temperature range from 105 to 155°C. Ohmic conductivity increases exponentially with increasing temperature with activation energy 0.94 eV. Tunneling voltage parameter and tunneling energy barrier decreases with increasing temperature, reaching values 0.45 to 0.26 eV.
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Proceedings of the 25st Conference STUDENT EEICT 2019. s. 645-649. ISBN 978-80-214-5735-5
http://www.feec.vutbr.cz/EEICT/
http://www.feec.vutbr.cz/EEICT/
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Peer-reviewed
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en
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© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií