Characteristics Of Gallium Arsenide Solar Cellsat High Temperature

Thumbnail
View/Open
Date
2017
Author
Altmetrics
Metadata
Show full item record
Abstract
This article reviews a work on processing of gallium arsenide (GaAs) solar cells. The performance of the cells before and after 300 _x000E_C thermal processing was correlated with topography identified by optical camera, atomic force microscope (AFM) and scanning electron microscope (SEM). Experiment indicates insignificant changes in topography of GaAs solar cells, but electrical characteristics show an excellent resistance of the samples to processing temperature.
Keywords
GaAs, solar cells, processing, topography, SEM, AFM
Persistent identifier
http://hdl.handle.net/11012/187189
Document type
Peer reviewed
Document version
xmlui.vut.verze.Publishers's version
Source
Proceedings of the 25st Conference STUDENT EEICT 2019. s. 680-684. ISBN 978-80-214-5735-5
http://www.feec.vutbr.cz/EEICT/
Collections
Citace PRO