Characteristics Of Gallium Arsenide Solar Cellsat High Temperature

Papež, Nikola

View/Open

680_eeict2017.pdf (1.182Mb)

Date

2017

Author

Papež, Nikola

Alternative metrics PlumX

Metadata

Show full item record

Abstract

This article reviews a work on processing of gallium arsenide (GaAs) solar cells. The performance of the cells before and after 300 _x000E_C thermal processing was correlated with topography identified by optical camera, atomic force microscope (AFM) and scanning electron microscope (SEM). Experiment indicates insignificant changes in topography of GaAs solar cells, but electrical characteristics show an excellent resistance of the samples to processing temperature.

Keywords

GaAs, solar cells, processing, topography, SEM, AFM

Persistent identifier

http://hdl.handle.net/11012/187189

Document type

Peer reviewed

Source

Proceedings of the 25st Conference STUDENT EEICT 2019. s. 680-684. ISBN 978-80-214-5735-5
http://www.feec.vutbr.cz/EEICT/

Collections

Student EEICT 2017 [174]