Fast response hydrogen microsensor based on semiconductor niobium-oxide nanostructures via smart anodizing of Al/Nb metal layers
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2014-12-31
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Elsevier
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Nanostructured niobium oxide semiconductor is gaining increasing attention as electro-optic and gas sensing material. However, the preparation of stable niobium oxide nanofilm with reproducible morphology and behaviour remains a challenge. Here we describe a rapid and well-controlled approach to synthesize a niobium oxide film with the columnlike nanostructured morphology via anodic processing of Al/Nb metal layers sputtered onto an oxide-coated Si wafer. The film is developed due to the growth of a nanoporous anodic alumina layer followed by pore-directed oxidation of the Nb underlayer. The post-anodizing treatment results in the controlled formation of Nb2O5 crystal phase, which causes the transformation from dielectric to n-type semiconductor behavior of the film. A laboratory gas sensor fabricated by uniting the anodizing approach developed here with standard micromachining technologies shows superior characteristics for hydrogen gas detection, the response-recovery time being among best ever reported
Popisujeme rychlou a dobře kontrolované přístup k syntéze film oxidu niobu s columnlike nanostrukturovaných morfologie přes zpracování anodické Al- Nb kovových vrstev rozprášena na oxidu povlakem Si waferů.
Popisujeme rychlou a dobře kontrolované přístup k syntéze film oxidu niobu s columnlike nanostrukturovaných morfologie přes zpracování anodické Al- Nb kovových vrstev rozprášena na oxidu povlakem Si waferů.
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Procedia Engineering. 2014, vol. 87, issue -, p. 811-814.
https://www.sciencedirect.com/science/article/pii/S1877705814027969
https://www.sciencedirect.com/science/article/pii/S1877705814027969
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en
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Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 Unported
http://creativecommons.org/licenses/by-nc-nd/3.0/
http://creativecommons.org/licenses/by-nc-nd/3.0/