An Independently Biased 3-stacked GaN HEMT Power Amplifier for Next-Generation Wireless Communication Systems
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In this paper, a design of 3-stacked GaN highelectron-mobility transistor radio-frequency power amplifier employing an independently biased technique is presented to meet stringent requirements of next-generation wireless communication systems. The ability of independently adjusting operation conditions for each transistor of the proposed amplifier makes it possible to operate not only for high efficiency, high linearity but also for both improved efficiency and linearity. Efficiency can be optimized through varying drain bias voltages. Linearity, however, can be optimized independently through varying gate bias voltages. Importantly, both efficiency and linearity can be optimized simultaneously by making a compromise between drain and gate bias voltages. In contrast to conventional methods, the proposed configuration still ensures a compact size for design of the power amplifier. This can be feasible because the proposed solution is introduced in the device level using a MMIC technology. These superior advantages make the proposed PA a promising candidate for using in transceiver of the next-generation wireless communications systems.
Document typePeer reviewed
Document versionFinal PDF
SourceRadioengineering. 2020 vol. 29, č. 4, s. 617-624. ISSN 1210-2512
- 2020/4