Emulation of Three-Pinch-Off Memristor Emulator Based on Highly Non-Linear Charge-Flux Characteristics

Loading...
Thumbnail Image
Date
2021-04
ORCID
Advisor
Referee
Mark
Journal Title
Journal ISSN
Volume Title
Publisher
Společnost pro radioelektronické inženýrství
Altmetrics
Abstract
The presented work describes an exclusive mathematical model for the multi-pinch-off behaviour generated by such non-linear memristors. The described mathematical results are based on the calculation of inflection points present on the memristor charge-flux curve, which have not been studied so far. The consideration of inflection points can be very useful in deciding various aspects of non-linear memristive applications. On the basis of derived mathematical conditions; VDTA active element based, a three-pinch-off memristor emulator has been developed, without employing any multiplier IC. For the first time, such compact emulator circuit has been proposed, which uses only two VDTAs and three grounded passive elements, to emulate multi-pinch-off behaviour at moderate frequencies. The behaviour of presented emulator is studied by performing simulations under PSPICE environment for CMOS VDTA. The presented VDTA based three-pinch-off memristor is also implemented using commercially available IC LM13700 and verified.
Description
Citation
Radioengineering. 2021 vol. 30, č. 1, s. 164-171. ISSN 1210-2512
https://www.radioeng.cz/fulltexts/2021/21_01_0164_0171.pdf
Document type
Peer-reviewed
Document version
Published version
Date of access to the full text
Language of document
en
Study field
Comittee
Date of acceptance
Defence
Result of defence
Document licence
Creative Commons Attribution 4.0 International license
http://creativecommons.org/licenses/by/4.0/
Collections
Citace PRO