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dc.contributor.authorBrodský, Jan
dc.date.accessioned2021-07-15T11:17:21Z
dc.date.available2021-07-15T11:17:21Z
dc.date.issued2020cs
dc.identifier.citationProceedings I of the 26st Conference STUDENT EEICT 2020: General papers. s. 292-295. ISBN 978-80-214-5867-3cs
dc.identifier.isbn978-80-214-5867-3
dc.identifier.urihttp://hdl.handle.net/11012/200582
dc.description.abstractThis work presents an unusual method for releasing microelectromechanical systems which contain an Al layer. This is done by wet etching of SiO2 as a sacrificial layer. Mixture of 49% HF acid and 20% H2SO4∙SO3 (oleum) is used. Oleum keeps the solution water-free and subsequently prevents the attack of Al layer. Exceptional etch rate (≈ 1 μm·min−1) of thermally grown SiO2 is achieved by this method. The infinite selectivity to Al layer is verified by measuring the thickness of layer before and after etching. The etching itself is done in an ordinary fume hood in polytetrafluorethylene (PTFE) beaker.en
dc.formattextcs
dc.format.extent292-295cs
dc.format.mimetypeapplication/pdfen
dc.language.isocscs
dc.publisherVysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.relation.ispartofProceedings I of the 26st Conference STUDENT EEICT 2020: General papersen
dc.relation.urihttps://conf.feec.vutbr.cz/eeict/EEICT2020cs
dc.rights© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.subjectMEMSen
dc.subjectselectivityen
dc.subjectSiO2 etchingen
dc.subjectsacrificial layeren
dc.titleWet Etching Of Sio2 As Sacrificial Layer With Infinite Selectivity To Alen
eprints.affiliatedInstitution.departmentFakulta elektrotechniky a komunikačních technologiícs
but.event.date23.04.2020cs
but.event.titleStudent EEICT 2020cs
dc.rights.accessopenAccessen
dc.type.driverconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen


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