Intrinsic And Extrinsic Parameters Of Galium - Nitride Transistors
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This article deals with the extrinsic and intrinsic parameters of the Galium-Nitride RF transistor. These parameters are essential in any design of large-signal analysis of RF amplifiers. Package parasitics are the biggest problem of integrated circuits (ICs), especially at high frequencies. Each IC package gives unwanted parasitics to the primary function of the IC. The analysis of these package parasitics can be performed by the transistor manufacturer, which provides a non-linear model of the transistor, where parasitics elements are separated from the transistor. With these separated package parasitics, the highest efficiency, power output, and accurate harmonic termination can be achieved. The main purpose of this article is to describe these problems.
KeywordsGaN Transistor, Waveforms, Extrinsic, Intrinsic, Load-Pull, Source-Pull, Radio-Frequency, Transistor Parasitics
Document typePeer reviewed
Document versionFinal PDF
SourceProceedings I of the 26st Conference STUDENT EEICT 2020: General papers. s. 314-318. ISBN 978-80-214-5867-3
- Student EEICT 2020