Characterization Of Aln Nanolayers Deposited On A Surface Of Hopg By Pe-Ald
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In this study plasma-enhanced atomic layer deposition process of AlN has been performedwith the purpose to test the expediency of highly oriented pyrolytic graphite (HOPG) to serve as asubstrate in such process. The obtained samples were thoroughly analyzed using various analyticaltechniques. Atomic force microscopy was employed for studying topographic and morphologicalfeatures of the surface; x-ray photoelectron spectroscopy (XPS) analysis supported by second ionmassspectrometry method (SIMS) has been conducted on the obtained sample to investigate thechemical nature of the deposited films as well as elemental distribution. Temperature stability ofHOPG makes it a suitable substrate for preparation of AlN films, being a bottom contact for furthertesting of the films electrical properties. The data gathered from the aforementioned techniques haveindicated that HOPG is a viable choice for AlN ALD process.
Keywordsaluminium nitride, atomic layer deposition, highly oriented pyrolytic graphite, x-rayphotoelectron spectroscopy, atomic force microscopy, second ion-mass spectrometry
Document typePeer reviewed
Document versionFinal PDF
SourceProceedings II of the 27st Conference STUDENT EEICT 2021: Selected Papers. s. 193-198. ISBN 978-80-214-5943-4