Optimization of Boron Diffusion for Screen Printed n-PERT Solar Cells
Abstract
In this work we investigate the effect of different boron emitter properties on the cell performance. We fabricated an n-PERT cell concept with front boron emitter and a phosphorous back surface field, with thermal SiO2/SiNx layers on both sides for surface passivation, and a screen printed and fired through metallization of commercial silver paste on both sides. The process was for all wafers the same, with the exception of boron diffusion - boron doping profiles varied in surface concentration, depth and resulting sheet resistance.
Keywords
silicon solar cell, n-PERT, doping profile, metallizationPersistent identifier
http://hdl.handle.net/11012/203143Document type
Peer reviewedDocument version
Final PDFSource
Energy Procedia. 2016, vol. 92, issue 1, p. 474-478.https://www.sciencedirect.com/science/article/pii/S1876610216305562
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- Ústav mikroelektroniky [181]
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