On the Investigation of Frequency-Related Fingerprints of Meminductor/Capacitor and Their Duals Realized by Circuit Emulators
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This article investigates the frequency-related fingerprints of the meminductor/capacitors and their duals realized by the circuit emulators. The direct dependency of the hysteresis loop area on the inverse of operating frequency is an important property of the memristor confirming its resistive memory nature. This works shows that not all such elements (which exhibit hysteresis characteristics) seem to follow this fingerprint on subjected to the sinusoidal current/voltage excitation signal when they are realized by the emulator circuits. It is found that in some cases PHL (Pinched Hysteresis Loop) characteristics of the memcapacitor/inductor and their elements, may seem to create a fallacy in their appearance. Although this behaviour is natural (but distinct from the memristor), it does produce some challenges during the measurements of these memelements and non-memelements. The behaviour has been demonstrated in the MATLAB generated plots and also verified in the experimental and simulation results obtained for the designed emulators for the memcapacitor/meminductor and their duals. The paper also attempts to propose potential solutions to avoid this delusion perceived in the PHL characteristics of memcapacitor/meminductor and their duals, due to conventional measuring methods.
KeywordsMemelement, memcapacitor, meminductor, PHL
Document typePeer reviewed
Document versionFinal PDF
SourceRadioengineering. 2022 vol. 31, č. 3, s. 374-381. ISSN 1210-2512
- 2022/3