Tunable Balun Low-Noise Amplifier in 65nm CMOS Technology
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Date
2014-04
ORCID
Advisor
Referee
Mark
Journal Title
Journal ISSN
Volume Title
Publisher
Společnost pro radioelektronické inženýrství
Abstract
The presented paper includes the design and implementation of a 65 nm CMOS low-noise amplifier (LNA) based on inductive source degeneration. The amplifier is realized with an active balun enabling a single-ended input which is an important requirement for low-cost system on chip implementations. The LNA has a tunable bandpass characteristics from 4.7 GHz up to 5.6 GHz and a continuously tunable gain from 22 dB down to 0 dB, which enables the required flexibility for multi-standard, multi-band receiver architectures. The gain and band tuning is realized with an optimized tunable active resistor in parallel to a tunable L-C tank amplifier load. The amplifier achieves an IIP3 linearity of -8dBm and a noise figure of 2.7 dB at the highest gain and frequency setting with a low power consumption of 10 mW. The high flexibility of the proposed LNA structure together with the overall good performance makes it well suited for future multi-standard low-cost receiver front-ends.
Description
Citation
Radioengineering. 2014, vol. 23, č. 1, s. 319-327. ISSN 1210-2512
http://www.radioeng.cz/fulltexts/2014/14_01_0319_0327.pdf
http://www.radioeng.cz/fulltexts/2014/14_01_0319_0327.pdf
Document type
Peer-reviewed
Document version
Published version
Date of access to the full text
Language of document
en