5 Watt GaN HEMT Power Amplifier for LTE
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This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output power of 36.7 dBm at 2.4 GHz for an input power of 25dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5MHz to 20MHz).
Document typePeer reviewed
Document versionFinal PDF
SourceRadioengineering. 2014, vol. 23, č. 1, s. 338-344. ISSN 1210-2512
- 2014/1