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dc.contributor.authorBiolek, Zdeněk
dc.contributor.authorBiolek, Dalibor
dc.contributor.authorBiolková, Viera
dc.date.accessioned2015-01-20T14:14:15Z
dc.date.available2015-01-20T14:14:15Z
dc.date.issued2013-04cs
dc.identifier.citationRadioengineering. 2013, vol. 22, č. 1, s. 132-135. ISSN 1210-2512cs
dc.identifier.issn1210-2512
dc.identifier.urihttp://hdl.handle.net/11012/36808
dc.description.abstractThe memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop area. This formula is then applied to memory elements whose parameter-vs.-state maps are modeled in the polynomial form. The TiO2 memristor, a special subset of the above elements, is analyzed as a demonstration example.en
dc.formattextcs
dc.format.extent132-135cs
dc.format.mimetypeapplication/pdfen
dc.language.isoencs
dc.publisherSpolečnost pro radioelektronické inženýrstvícs
dc.relation.ispartofRadioengineeringcs
dc.relation.urihttp://www.radioeng.cz/fulltexts/2013/13_01_0132_0135.pdfcs
dc.rightsCreative Commons Attribution 3.0 Unported Licenseen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectMemory elementen
dc.subjectmemristoren
dc.subjectpinched hysteresis loop.en
dc.titleAnalytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elementsen
eprints.affiliatedInstitution.facultyFakulta eletrotechniky a komunikačních technologiícs
dc.coverage.issue1cs
dc.coverage.volume22cs
dc.rights.accessopenAccessen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen


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Except where otherwise noted, this item's license is described as Creative Commons Attribution 3.0 Unported License