Trap-Assisted Tunneling in the Schottky Barrier
Abstract
The paper presents a new way how to calculate the currents in a Schottky barrier. The novel phenomeno-logical model extends the Shockley-Read-Hall recombi-nation-generation theory of trap-assisted tunneling. The proposed approach explains the occurrence of large leakage currents in Schottky structures on wide band semi-conductors with a high Schottky barrier (above 1 eV) and with a high density of traps. Under certain conditions, trap-assisted tunneling (TAT) plays a more important role than direct tunneling.
Keywords
Trap-assisted, direct tunneling, Schottky barrierPersistent identifier
http://hdl.handle.net/11012/36842Document type
Peer reviewedDocument version
Final PDFSource
Radioengineering. 2013, vol. 22, č. 1, s. 240-244. ISSN 1210-2512http://www.radioeng.cz/fulltexts/2013/13_01_0240_0244.pdf
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- 2013/1 [52]