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dc.contributor.authorRacko, J.
dc.contributor.authorPechacek, J.
dc.contributor.authorMikolasek, M.
dc.contributor.authorBenko, P.
dc.contributor.authorGrmanova, A.
dc.contributor.authorHarmatha, L.
dc.contributor.authorBreza, J.
dc.date.accessioned2015-01-20T14:14:17Z
dc.date.available2015-01-20T14:14:17Z
dc.date.issued2013-04cs
dc.identifier.citationRadioengineering. 2013, vol. 22, č. 1, s. 240-244. ISSN 1210-2512cs
dc.identifier.issn1210-2512
dc.identifier.urihttp://hdl.handle.net/11012/36842
dc.description.abstractThe paper presents a new way how to calculate the currents in a Schottky barrier. The novel phenomeno-logical model extends the Shockley-Read-Hall recombi-nation-generation theory of trap-assisted tunneling. The proposed approach explains the occurrence of large leakage currents in Schottky structures on wide band semi-conductors with a high Schottky barrier (above 1 eV) and with a high density of traps. Under certain conditions, trap-assisted tunneling (TAT) plays a more important role than direct tunneling.en
dc.formattextcs
dc.format.extent240-244cs
dc.format.mimetypeapplication/pdfen
dc.language.isoencs
dc.publisherSpolečnost pro radioelektronické inženýrstvícs
dc.relation.ispartofRadioengineeringcs
dc.relation.urihttp://www.radioeng.cz/fulltexts/2013/13_01_0240_0244.pdfcs
dc.rightsCreative Commons Attribution 3.0 Unported Licenseen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectTrap-assisteden
dc.subjectdirect tunnelingen
dc.subjectSchottky barrieren
dc.titleTrap-Assisted Tunneling in the Schottky Barrieren
eprints.affiliatedInstitution.facultyFakulta eletrotechniky a komunikačních technologiícs
dc.coverage.issue1cs
dc.coverage.volume22cs
dc.rights.accessopenAccessen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen


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