Optical Control of Millmeter-wave Lateral Double-Drift Region Silicon IMPATT Device
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The effect of optical illumination on lateral Double-Drift Region (DDR) structure of Silicon Impact Avalanche Transit Time (IMPATT) device is investigated in this paper. The device is designed to operate at mm-wave W-band frequency. The optical modulation of DC and RF properties of lateral DDR IMPATT device is studied by a simulation technique which incorporates the dependence of normalized difference of photocurrent density at the depletion layer edges on the intensity of optical illumination and surface density of photon flux. The simulation results are compared with those obtained for a conventional vertical DDR Si IMPATT structure under similar optical and electrical operating conditions. The results show that the optical control is more effective in lateral IMPATT structure than in its vertical counterpart as regards reduction of output power and shifting of optimum frequency. When light is incident on hole drift layer of the lateral structure the output power reduces by 18.7% while the optimum frequency shifts upwards by 2.48%. Under similar conditions the power reduces by 10.9% and optimum frequency shifts upwards by 0.75% in vertical structure.
Document typePeer reviewed
Document versionFinal PDF
SourceRadioengineering. 2012, vol. 21, č. 4, s. 1208-1217. ISSN 1210-2512
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