Enhanced Model of Nonlinear Spiral High Voltage Divider

This paper deals with the enhanced accurate DC and RF model of nonlinear spiral polysilicon voltage divider. The high resistance polysilicon divider is a sensing part of the high voltage start-up MOSFET transistor that can operate up to 700 V. This paper presents the structure of a proposed model, implemented voltage, frequency and temperature dependency, and scalability. A special attention is paid to the ability of the created model to cover the mismatch and influence of a variation of process parameters on the device characteristics. Finally, the comparison of measured data vs. simulation is presented in order to confirm the model validity and a typical application is demonstrated.

Keywords

High voltage start-up MOSFET, pinch-off, high voltage spiral divider, statistical modeling

Citation

Radioengineering. 2015 vol. 24, č. 1, s. 130-136. ISSN 1210-2512
http://www.radioeng.cz/fulltexts/2015/15_01_0130_0136.pdf

Document type

Peer-reviewed

Document version

Published version

Language of document

en

Document licence

Creative Commons Attribution 3.0 Unported License
http://creativecommons.org/licenses/by/3.0/