Improved Model of TiO2 Memristor
Abstract
Analysis of Pickett’s model of the HP TiO2 memristor presented in this paper reveals an ambiguity of its port equation, which may cause non-convergence, numerical errors, and non-physical solutions during time-domain simulation. As there is no easy fix of the original model a new behavioral approximation of static I-V characteristics has been proposed. The approximation matches well the original model and is unambiguous.
Keywords
TiO2 memristor, Port Equation, State Equation, Pickett’s model, simulationPersistent identifier
http://hdl.handle.net/11012/41838Document type
Peer reviewedDocument version
Final PDFSource
Radioengineering. 2015 vol. 24, č. 2, s. 378-383. ISSN 1210-2512http://www.radioeng.cz/fulltexts/2015/15_02_0378_0383.pdf
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