Improved Model of TiO2 Memristor
Analysis of Pickett’s model of the HP TiO2 memristor presented in this paper reveals an ambiguity of its port equation, which may cause non-convergence, numerical errors, and non-physical solutions during time-domain simulation. As there is no easy fix of the original model a new behavioral approximation of static I-V characteristics has been proposed. The approximation matches well the original model and is unambiguous.
Document typePeer reviewed
Document versionFinal PDF
SourceRadioengineering. 2015 vol. 24, č. 2, s. 378-383. ISSN 1210-2512
- 2015/2