Improved Model of TiO2 Memristor
MetadataPokaż pełny rekord
Analysis of Pickett’s model of the HP TiO2 memristor presented in this paper reveals an ambiguity of its port equation, which may cause non-convergence, numerical errors, and non-physical solutions during time-domain simulation. As there is no easy fix of the original model a new behavioral approximation of static I-V characteristics has been proposed. The approximation matches well the original model and is unambiguous.
Document typePeer reviewed
Document versionFinal PDF
SourceRadioengineering. 2015 vol. 24, č. 2, s. 378-383. ISSN 1210-2512
- 2015/2