Improved Model of TiO2 Memristor

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Date
2015-06
ORCID
Advisor
Referee
Mark
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Volume Title
Publisher
Společnost pro radioelektronické inženýrství
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Abstract
Analysis of Pickett’s model of the HP TiO2 memristor presented in this paper reveals an ambiguity of its port equation, which may cause non-convergence, numerical errors, and non-physical solutions during time-domain simulation. As there is no easy fix of the original model a new behavioral approximation of static I-V characteristics has been proposed. The approximation matches well the original model and is unambiguous.
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Citation
Radioengineering. 2015 vol. 24, č. 2, s. 378-383. ISSN 1210-2512
http://www.radioeng.cz/fulltexts/2015/15_02_0378_0383.pdf
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Peer-reviewed
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Published version
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en
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Creative Commons Attribution 3.0 Unported License
http://creativecommons.org/licenses/by/3.0/
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