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dc.contributor.authorKolka, Zdenek
dc.contributor.authorBiolek, Dalibor
dc.contributor.authorBiolkova, Viera
dc.date.accessioned2015-06-29T11:13:55Z
dc.date.available2015-06-29T11:13:55Z
dc.date.issued2015-06cs
dc.identifier.citationRadioengineering. 2015 vol. 24, č. 2, s. 378-383. ISSN 1210-2512cs
dc.identifier.issn1210-2512
dc.identifier.urihttp://hdl.handle.net/11012/41838
dc.description.abstractAnalysis of Pickett’s model of the HP TiO2 memristor presented in this paper reveals an ambiguity of its port equation, which may cause non-convergence, numerical errors, and non-physical solutions during time-domain simulation. As there is no easy fix of the original model a new behavioral approximation of static I-V characteristics has been proposed. The approximation matches well the original model and is unambiguous.en
dc.formattextcs
dc.format.extent378-383cs
dc.format.mimetypeapplication/pdfen
dc.language.isoencs
dc.publisherSpolečnost pro radioelektronické inženýrstvícs
dc.relation.ispartofRadioengineeringcs
dc.relation.urihttp://www.radioeng.cz/fulltexts/2015/15_02_0378_0383.pdfcs
dc.rightsCreative Commons Attribution 3.0 Unported Licenseen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectTiO2 memristoren
dc.subjectPort Equationen
dc.subjectState Equationen
dc.subjectPickett’s modelen
dc.subjectsimulationen
dc.titleImproved Model of TiO2 Memristoren
eprints.affiliatedInstitution.facultyFakulta eletrotechniky a komunikačních technologiícs
dc.coverage.issue2cs
dc.coverage.volume24cs
dc.identifier.doi10.13164/re.2015.0378en
dc.rights.accessopenAccessen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen


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Except where otherwise noted, this item's license is described as Creative Commons Attribution 3.0 Unported License