Reliable Modeling of Ideal Generic Memristors via State-Space Transformation
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The paper refers to problems of modeling and computer simulation of generic memristors caused by the so-called window functions, namely the stick effect, nonconvergence, and finding fundamentally incorrect solutions. A profoundly different modeling approach is proposed, which is mathematically equivalent to window-based modeling. However, due to its numerical stability, it definitely smoothes the above problems away.
Document typePeer reviewed
Document versionFinal PDF
SourceRadioengineering. 2015 vol. 24, č. 2, s. 393-407. ISSN 1210-2512
- 2015/2