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dc.contributor.authorPicos, Rodrigo
dc.contributor.authorRoldan, Juan Bautista
dc.contributor.authorAl Chawa, Mohamed Moner
dc.contributor.authorGarcia-Fernandez, Pedro
dc.contributor.authorJimenez-Molinos, Francisco
dc.contributor.authorGarcia-Moreno, Eugeni
dc.date.accessioned2015-06-29T11:33:38Z
dc.date.available2015-06-29T11:33:38Z
dc.date.issued2015-06cs
dc.identifier.citationRadioengineering. 2015 vol. 24, č. 2, s. 420-424. ISSN 1210-2512cs
dc.identifier.issn1210-2512
dc.identifier.urihttp://hdl.handle.net/11012/41842
dc.description.abstractWe have measured the transition process from the high to low resistivity states, i.e., the reset process of resistive switching based memristors based on Ni/HfO2/Si-n+ structures, and have also developed an analytical model for their electrical characteristics. When the characteristic curves are plotted in the current-voltage (I-V) domain a high variability is observed. In spite of that, when the same curves are plotted in the charge-flux domain (Q-phi), they can be described by a simple model containing only three parameters: the charge (Qrst) and the flux (rst) at the reset point, and an exponent, n, relating the charge and the flux before the reset transition. The three parameters can be easily extracted from the Q-phi plots. There is a strong correlation between these three parameters, the origin of which is still under study.en
dc.formattextcs
dc.format.extent420-424cs
dc.format.mimetypeapplication/pdfen
dc.language.isoencs
dc.publisherSpolečnost pro radioelektronické inženýrstvícs
dc.relation.ispartofRadioengineeringcs
dc.relation.urihttp://www.radioeng.cz/fulltexts/2015/15_02_0420_0424.pdfcs
dc.rightsCreative Commons Attribution 3.0 Unported Licenseen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectRRAMen
dc.subjectmemristor modelingen
dc.subjectreset voltageen
dc.subjectVrst determinationen
dc.subjectvariabilityen
dc.titleSemiempirical Modeling of Reset Transitions in Unipolar Resistive-Switching based Memristorsen
eprints.affiliatedInstitution.facultyFakulta eletrotechniky a komunikačních technologiícs
dc.coverage.issue2cs
dc.coverage.volume24cs
dc.identifier.doi10.13164/re.2015.0420en
dc.rights.accessopenAccessen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen


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