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  • Activation Energy of RTS Noise 

    Pavelka, J.; Sikula, J.; Tacano, M.; Toita, M. (Společnost pro radioelektronické inženýrství, 2011-04)
    Low frequency noise was measured in silicon MOSFET and GaN and InGaAs based HFET devices with special emphasis on the RTS noise. The RTS (Random Telegraph Signal) dependence on the biasing conditions and temperature was ...