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  • Activation Energy of RTS Noise 

    Pavelka, J.; Sikula, J.; Tacano, M.; Toita, M. (Společnost pro radioelektronické inženýrství, 2011-04)
    Low frequency noise was measured in silicon MOSFET and GaN and InGaAs based HFET devices with special emphasis on the RTS noise. The RTS (Random Telegraph Signal) dependence on the biasing conditions and temperature was ...
  • Noise in piezoelectric ceramics at the low temperatures 

    Sedlak, P.; Majzner, J.; Sikula, J. (Společnost pro radioelektronické inženýrství, 2011-04)
    The piezoelectric ceramic belongs to materials with widespread spectrum of applications. It can be found in sensors as well as in ceramic capacitors. The main sources of voltage or current fluctuation in piezoelectric ...