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dc.contributor.authorSokol, Vratislav
dc.contributor.authorCerny, Petr
dc.contributor.authorHoffmann, Karel
dc.contributor.authorSkvor, Zbynek
dc.date.accessioned2016-04-25T08:11:12Z
dc.date.available2016-04-25T08:11:12Z
dc.date.issued2005-12cs
dc.identifier.citationRadioengineering. 2005, vol. 14, č. 4, s. 75-80. ISSN 1210-2512cs
dc.identifier.issn1210-2512
dc.identifier.urihttp://hdl.handle.net/11012/58024
dc.description.abstractA detailed analysis of the assembly influence on the small-signal parameters of a packaged transistor is presented. A new method, based on 3D field simulation and mixed-mode scattering parameters approach is proposed. Differences in scattering parameters caused by assembly change are computed using the new proposed method and compared to the standard method based on admittance matrix. The differences, accuracy, error sources and suitability of both methods are discussed. Results are verified experimentally in microstrip line for two fundamental assembly changes of a transistor in SOT 343 package in frequency range 45 MHz - 18 GHz.en
dc.formattextcs
dc.format.extent75-80cs
dc.format.mimetypeapplication/pdfen
dc.language.isoencs
dc.publisherSpolečnost pro radioelektronické inženýrstvícs
dc.relation.ispartofRadioengineeringcs
dc.relation.urihttp://www.radioeng.cz/fulltexts/2005/05_04_075_080.pdfcs
dc.rightsCreative Commons Attribution 3.0 Unported Licenseen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectAssembly influenceen
dc.subjectComponent modelingen
dc.subjectEM simulationen
dc.subjectMixed-Mode scattering parametersen
dc.titleAssembly Influence on the Small-Signal Parameters of a Packaged Transistoren
eprints.affiliatedInstitution.facultyFakulta eletrotechniky a komunikačních technologiícs
dc.coverage.issue4cs
dc.coverage.volume14cs
dc.rights.accessopenAccessen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen


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