dc.contributor.author | Vobecky, J. | |
dc.contributor.author | Voves, J. | |
dc.contributor.author | Hazdra, P. | |
dc.contributor.author | Adamcik, I. | |
dc.date.accessioned | 2016-05-09T08:57:49Z | |
dc.date.available | 2016-05-09T08:57:49Z | |
dc.date.issued | 1993-04 | cs |
dc.identifier.citation | Radioengineering. 1993, vol. 2, č. 1, s. 6-9. ISSN 1210-2512 | cs |
dc.identifier.issn | 1210-2512 | |
dc.identifier.uri | http://hdl.handle.net/11012/58596 | |
dc.description.abstract | The semiconductor industry is continuously striving to improve the performance of electron devices and circuits. It implies the need for better understanding of their basic behaviour. However, the miniaturization and complexity of devices led to a breakdo | en |
dc.format | text | cs |
dc.format.extent | 6-9 | cs |
dc.format.mimetype | application/pdf | en |
dc.language.iso | en | cs |
dc.publisher | Společnost pro radioelektronické inženýrství | cs |
dc.relation.ispartof | Radioengineering | cs |
dc.relation.uri | http://www.radioeng.cz/fulltexts/1993/93_01_02.pdf | cs |
dc.rights | Creative Commons Attribution 3.0 Unported License | en |
dc.rights.uri | http://creativecommons.org/licenses/by/3.0/ | en |
dc.title | TCAD - A Progressive Tool for Engineers | en |
eprints.affiliatedInstitution.faculty | Fakulta eletrotechniky a komunikačních technologií | cs |
dc.coverage.issue | 1 | cs |
dc.coverage.volume | 2 | cs |
dc.rights.access | openAccess | en |
dc.type.driver | article | en |
dc.type.status | Peer-reviewed | en |
dc.type.version | publishedVersion | en |