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dc.contributor.authorVobecky, J.
dc.contributor.authorVoves, J.
dc.contributor.authorHazdra, P.
dc.contributor.authorAdamcik, I.
dc.date.accessioned2016-05-09T08:57:49Z
dc.date.available2016-05-09T08:57:49Z
dc.date.issued1993-04cs
dc.identifier.citationRadioengineering. 1993, vol. 2, č. 1, s. 6-9. ISSN 1210-2512cs
dc.identifier.issn1210-2512
dc.identifier.urihttp://hdl.handle.net/11012/58596
dc.description.abstractThe semiconductor industry is continuously striving to improve the performance of electron devices and circuits. It implies the need for better understanding of their basic behaviour. However, the miniaturization and complexity of devices led to a breakdoen
dc.formattextcs
dc.format.extent6-9cs
dc.format.mimetypeapplication/pdfen
dc.language.isoencs
dc.publisherSpolečnost pro radioelektronické inženýrstvícs
dc.relation.ispartofRadioengineeringcs
dc.relation.urihttp://www.radioeng.cz/fulltexts/1993/93_01_02.pdfcs
dc.rightsCreative Commons Attribution 3.0 Unported Licenseen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.titleTCAD - A Progressive Tool for Engineersen
eprints.affiliatedInstitution.facultyFakulta eletrotechniky a komunikačních technologiícs
dc.coverage.issue1cs
dc.coverage.volume2cs
dc.rights.accessopenAccessen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen


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