High Efficiency Classes of RF Amplifiers
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This article is dealing with high efficiency RF amplifiers in modern classes F, E and J. The first part is focused on basic function, main parameters and the output matching topologies of the mentioned classes. Output voltage and current waveforms were simulated for each class of high efficiency amplifiers. The primary focus of this work is the practical design of class F amplifier for 435 MHz band with E-pHEMT transistor. Power added efficiency (PAE) of amplifier achieved 58% and output power was 27 dBm with 14 dBm of input power. Amplifier was realized exclusively with lumped components in order to adhere to the given dimensions. Class F amplifiers designed at megahertz frequencies and with E-pHEMT transistor are quite rare and this article could help designers with understanding narrowband F-class amplifiers with higher efficiency. This amplifier can be used in long range IoT application, because of its low consumption of energy which is necessary in this modern technology. All results were simulated within ADS Keysight environment. Every simulation was realized with nonlinear models from Modelithics.
Document typePeer reviewed
Document versionFinal PDF
SourceElektrorevue - Internetový časopis (http://www.elektrorevue.cz). 2018, vol. 20, issue 2, p. 1-5.
- Ústav radioelektroniky