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dc.contributor.authorHerceg, Erikcs
dc.contributor.authorUrbanec, Tomášcs
dc.date.accessioned2018-11-29T13:51:40Z
dc.date.available2018-11-29T13:51:40Z
dc.date.issued2018-02-28cs
dc.identifier.citationElektrorevue - Internetový časopis (http://www.elektrorevue.cz). 2018, vol. 20, issue 2, p. 1-5.en
dc.identifier.issn1213-1539cs
dc.identifier.other147405cs
dc.identifier.urihttp://hdl.handle.net/11012/72427
dc.description.abstractThis article is dealing with high efficiency RF amplifiers in modern classes F, E and J. The first part is focused on basic function, main parameters and the output matching topologies of the mentioned classes. Output voltage and current waveforms were simulated for each class of high efficiency amplifiers. The primary focus of this work is the practical design of class F amplifier for 435 MHz band with E-pHEMT transistor. Power added efficiency (PAE) of amplifier achieved 58% and output power was 27 dBm with 14 dBm of input power. Amplifier was realized exclusively with lumped components in order to adhere to the given dimensions. Class F amplifiers designed at megahertz frequencies and with E-pHEMT transistor are quite rare and this article could help designers with understanding narrowband F-class amplifiers with higher efficiency. This amplifier can be used in long range IoT application, because of its low consumption of energy which is necessary in this modern technology. All results were simulated within ADS Keysight environment. Every simulation was realized with nonlinear models from Modelithics.en
dc.formattextcs
dc.format.extent1-5cs
dc.format.mimetypeapplication/pdfcs
dc.language.isoencs
dc.publisherInternational Science and Engineering Societycs
dc.relation.ispartofElektrorevue - Internetový časopis (http://www.elektrorevue.cz)cs
dc.relation.urihttp://www.elektrorevue.cz/cz/clanky/komunikacni-technologie/0/high-efficiency-classes-of-rf-amplifiers/cs
dc.rightsCreative Commons Attribution-NonCommercial-NoDerivatives 4.0 Internationalcs
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/cs
dc.subjectAmplifieren
dc.subjectefficiencyen
dc.subjectresonant circuitsen
dc.subjectclass Fen
dc.titleHigh Efficiency Classes of RF Amplifiersen
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. Ústav radioelektronikycs
sync.item.dbidVAV-147405en
sync.item.dbtypeVAVen
sync.item.insts2020.04.01 11:00:00en
sync.item.modts2020.04.01 06:01:19en
dc.coverage.issue2cs
dc.coverage.volume20cs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/1213-1539/cs
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen


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Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
Except where otherwise noted, this item's license is described as Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International