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dc.contributor.authorDabbous, Salma Bay Abo
dc.date.accessioned2018-07-10T12:48:22Z
dc.date.available2018-07-10T12:48:22Z
dc.date.issued2016cs
dc.identifier.citationProceedings of the 22nd Conference STUDENT EEICT 2016. s. 695-699. ISBN 978-80-214-5350-0cs
dc.identifier.isbn978-80-214-5350-0
dc.identifier.urihttp://hdl.handle.net/11012/84022
dc.description.abstractThis paper presents ultra-Low power (ultra-LP) Low voltage (LV) tunable transconductor (Gm) and its application to implement Gm-C filter. The CMOS structure of the Gm is performed using bulk-driven (BD) MOST technique, thus it can operate with extremely low voltage supply of ±0.3 V using 0.18 μm CMOS process. Moreover, it consumes ultra-LP about 4.9 μW. The simple topology, proper operating range, and tunability make this transconductor attractive. The transconductor and the Gm-C filter have been examined using simulation program Pspice.en
dc.formattextcs
dc.format.extent695-699cs
dc.format.mimetypeapplication/pdfen
dc.language.isoencs
dc.publisherVysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.relation.ispartofProceedings of the 22nd Conference STUDENT EEICT 2016en
dc.relation.urihttp://www.feec.vutbr.cz/EEICT/cs
dc.rights© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.subjectBulk Driven MOSTen
dc.subjectlow power low voltageen
dc.subjecttransconductoren
dc.titleUltra Low Power Tunable Transconductoren
eprints.affiliatedInstitution.departmentFakulta elektrotechniky a komunikačních technologiícs
but.event.date28.04.2016cs
but.event.titleStudent EEICT 2016cs
dc.rights.accessopenAccessen
dc.type.driverconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionPublishers's versionen


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