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dc.contributor.authorGajdos, Adam
dc.date.accessioned2019-03-04T10:05:57Z
dc.date.available2019-03-04T10:05:57Z
dc.date.issued2018cs
dc.identifier.citationProceedings of the 24th Conference STUDENT EEICT 2018. s. 518-522. ISBN 978-80-214-5614-3cs
dc.identifier.isbn978-80-214-5614-3
dc.identifier.urihttp://hdl.handle.net/11012/138288
dc.description.abstractThis article is aimed on characterization of silicon solar cells microstructural inhomogeneities. To detect inhomogeneity or imperfection, reverse biased current voltage (I-V) measurement is used. These imperfections in some cases may cause avalanche type of breakdown, that can be visible in I-V curve. Therefore, the fact that certain imperfections emit light is used for localization needs. Raw localization is provided by electroluminescence (EL) method. Near-field scanning microscopy (SNOM) combined with photomultiplier tube is used for microscale localization. Both methods are done in reverse bias. Isolation of inhomogeneity by focused ion beam (FIB) is avoiding leakage current flow through it.en
dc.formattextcs
dc.format.extent518-522cs
dc.format.mimetypeapplication/pdfen
dc.language.isoencs
dc.publisherVysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.relation.ispartofProceedings of the 24th Conference STUDENT EEICT 2018en
dc.relation.urihttp://www.feec.vutbr.cz/EEICT/cs
dc.rights© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.subjectSolar cellen
dc.subjectFIBen
dc.subjectSEMen
dc.subjectSNOMen
dc.subjectsiliconen
dc.subjectelectroluminescenceen
dc.titleLocal Isolation Of Microscale Defective Areas In Monocrysline Silicon Solar Cellsen
eprints.affiliatedInstitution.departmentFakulta elektrotechniky a komunikačních technologiícs
but.event.date26.04.2018cs
but.event.titleStudent EEICT 2018cs
dc.rights.accessopenAccessen
dc.type.driverconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionPublishers's versionen


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