0.3V Bulk-driven current conveyor
Alternative metrics PlumXhttp://hdl.handle.net/11012/173200
MetadataShow full item record
This paper presents the design and the experimental results of a sub 0.5 V bulk-driven (BD) current conveyor (CCII) using 0.18 µm TSMC CMOS technology with total chip area of 0.0134 mm2. All transistors are biased in subthreshold region for low-voltage low-power operation and the input transistors are controlled from their bulk terminals for rail-to-rail input voltage range. The circuit is designed to work with voltage supply (VDD = 0.3V) which is much lower than the threshold voltage of the MOS transistor (VTH=0.5V) while consuming 19 nW of power. The measurement results confirm the proper function of the proposed circuit.
Document typePeer reviewed
SourceIEEE Access. 2019, vol. 7, issue 1, IF: 4.098, p. 65122-65128.
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