Simulation of Electrical Characteristics of Switching Nanostructures "Pt – TiO – Pt" and "Pt – NiO – Pt" with Memory
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The nanostructures “Pt – TiO – Pt” and “Pt – NiO – Pt” with weak switching properties and memory were studied within the framework of semi-empirical Huckel method. The calculation was implemented in the program Atomistix ToolKit with Virtual NanoLab. The transmission spectra, current-voltage characteristics and differential conductivity of nanostructures are calculated. It was revealed that in the range of voltages -1.3 V÷1.3 V, a hysteresis appears in the form of eight shaped figure on the current-voltage characteristic of Pt – TiO – Pt nano-structure, and in Pt – NiO – Pt nanostructure, the hysteresis appears in the voltage intervals -1.8 V÷0.8 V and 0.9 V÷1.8 V in the form of two oval-shaped figures connected to a segment. The manifestation of the hysteresis characteristic of these nanocontacts shows that they have memory. It was found that a negative differential resistance is observed in the voltage range, where the hysteresis of the current-voltage characteristic is appeared. It is shown that the investigating nanostructures have weak switching properties. The results of the paper can be useful for the calculation of memristic elements of nanoelectronics.
KeywordsMemristor, nanostructure, electron transport, current-voltage characteristic, differential conductivity, transmission function (spectrum)
Document typePeer reviewed
Document versionFinal PDF
SourceRadioengineering. 2019 vol. 28, č. 4, s. 714-720. ISSN 1210-2512
- 2019/4