Enhanced Model of Nonlinear Spiral High Voltage Divider
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This paper deals with the enhanced accurate DC and RF model of nonlinear spiral polysilicon voltage divider. The high resistance polysilicon divider is a sensing part of the high voltage start-up MOSFET transistor that can operate up to 700 V. This paper presents the structure of a proposed model, implemented voltage, frequency and temperature dependency, and scalability. A special attention is paid to the ability of the created model to cover the mismatch and influence of a variation of process parameters on the device characteristics. Finally, the comparison of measured data vs. simulation is presented in order to confirm the model validity and a typical application is demonstrated.
Document typePeer reviewed
Document versionFinal PDF
SourceRadioengineering. 2015 vol. 24, č. 1, s. 130-136. ISSN 1210-2512
- 2015/1