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dc.contributor.authorŠkvarenina, Ľ.
dc.date.accessioned2015-08-25T08:43:08Z
dc.date.available2015-08-25T08:43:08Z
dc.date.issued2015cs
dc.identifier.citationProceedings of the 21st Conference STUDENT EEICT 2015. s. 546-550. ISBN 978-80-214-5148-3cs
dc.identifier.isbn978-80-214-5148-3
dc.identifier.urihttp://hdl.handle.net/11012/43060
dc.description.abstractThis paper presents mainly noise diagnostics of pn junctions local defects in a singlecrystalline silicon solar cells structure. Research consists of a non-destructive measurement methodology of reverse-biased junction in solar cells. Diagnostics of defect areas in this documents are based especially on measurement of noise power spectral density, measurement of the radiation emitted from defects in visible range and I-V characteristic measurement.en
dc.formattextcs
dc.format.extent546-550cs
dc.format.mimetypeapplication/pdfen
dc.language.isoencs
dc.publisherVysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.relation.ispartofProceedings of the 21st Conference STUDENT EEICT 2015en
dc.relation.urihttp://www.feec.vutbr.cz/EEICT/cs
dc.rights© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.subjectSolar Cellsen
dc.subjectSiliconen
dc.subjectNoise Spectroscopyen
dc.subjectDiagnosticsen
dc.subjectDefectsen
dc.subjectFlicker Noiseen
dc.titleCurrent Fluctuations of Reverse-Biased Solaren
eprints.affiliatedInstitution.departmentFakulta elektrotechniky a komunikačních technologiícs
but.event.date23.04.2015cs
but.event.titleStudent EEICT 2015cs
dc.rights.accessopenAccessen
dc.type.driverconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen


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