Modeling of Microwave Semiconductor Diodes

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Date
2008-09
Author
Alternative metrics PlumX
http://hdl.handle.net/11012/57213
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Abstract
The paper deals with the multi-physical mode-ling of microwave diodes. The electrostatic, drift-diffusion and thermal phenomena are considered in the physical model of the components. The basic semiconductor equati-ons are summarized, and modeling issues are discussed. The simulations of the Gunn Effect in transferred electron devices and the carrier injection effect in PIN diodes are investigated and discussed. The analysis was performed in COMSOL Multiphysics using the finite element method.
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http://hdl.handle.net/11012/57213
Document type
Peer reviewed
Source
Radioengineering. 2008, vol. 17, č. 3, s. 47-52. ISSN 1210-2512
http://www.radioeng.cz/fulltexts/2008/08_03_047_052.pdf
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Except where otherwise noted, this item's license is described as Creative Commons Attribution 3.0 Unported License