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dc.contributor.authorPokorny, M.
dc.contributor.authorRaida, Zbyněk
dc.date.accessioned2016-03-18T10:36:57Z
dc.date.available2016-03-18T10:36:57Z
dc.date.issued2008-09cs
dc.identifier.citationRadioengineering. 2008, vol. 17, č. 3, s. 47-52. ISSN 1210-2512cs
dc.identifier.issn1210-2512
dc.identifier.urihttp://hdl.handle.net/11012/57213
dc.description.abstractThe paper deals with the multi-physical mode-ling of microwave diodes. The electrostatic, drift-diffusion and thermal phenomena are considered in the physical model of the components. The basic semiconductor equati-ons are summarized, and modeling issues are discussed. The simulations of the Gunn Effect in transferred electron devices and the carrier injection effect in PIN diodes are investigated and discussed. The analysis was performed in COMSOL Multiphysics using the finite element method.en
dc.formattextcs
dc.format.extent47-52cs
dc.format.mimetypeapplication/pdfen
dc.language.isoencs
dc.publisherSpolečnost pro radioelektronické inženýrstvícs
dc.relation.ispartofRadioengineeringcs
dc.relation.urihttp://www.radioeng.cz/fulltexts/2008/08_03_047_052.pdfcs
dc.rightsCreative Commons Attribution 3.0 Unported Licenseen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectGunn effecten
dc.subjectcarrier injection effecten
dc.subjectPINen
dc.subjectFEMen
dc.subjectCOMSOL Multiphysicsen
dc.subjectdrift-diffusion schemeen
dc.subjectmulti-physical modelen
dc.titleModeling of Microwave Semiconductor Diodesen
eprints.affiliatedInstitution.facultyFakulta eletrotechniky a komunikačních technologiícs
dc.coverage.issue3cs
dc.coverage.volume17cs
dc.rights.accessopenAccessen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen


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