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dc.contributor.authorSutory, T.
dc.contributor.authorKolka, Zdeněk
dc.date.accessioned2016-03-18T10:37:14Z
dc.date.available2016-03-18T10:37:14Z
dc.date.issued2008-12cs
dc.identifier.citationRadioengineering. 2008, vol. 17, č. 4, s. 9-14. ISSN 1210-2512cs
dc.identifier.issn1210-2512
dc.identifier.urihttp://hdl.handle.net/11012/57227
dc.description.abstractThe paper deals with a modified CBCM (Charge-Based Capacitance Measurements) method for nonlinear capacitance characterization. The method is characterized by high resolution although it is based on equipment found in any average laboratory. CBCM was originally developed for linear interconnect measurements. The proposed modification uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to switch the measured object. A test-chip implementing the method was designed and manufactured in the 0.35μm CMOS process. Verifica- tion against known capacitances proved the correctness and accuracy of the method. It was successfully used for MOSCAPs characterization.en
dc.formattextcs
dc.format.extent9-14cs
dc.format.mimetypeapplication/pdfen
dc.language.isoencs
dc.publisherSpolečnost pro radioelektronické inženýrstvícs
dc.relation.ispartofRadioengineeringcs
dc.relation.urihttp://www.radioeng.cz/fulltexts/2008/08_04a_009_014.pdfcs
dc.rightsCreative Commons Attribution 3.0 Unported Licenseen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectCharge-based capacitance measurementsen
dc.subjectstructuresen
dc.subjectMOS capacitorsen
dc.subjectintegrated circuits. Testen
dc.titleCharacterization of Nonlinear Integrated Capacitorsen
eprints.affiliatedInstitution.facultyFakulta eletrotechniky a komunikačních technologiícs
dc.coverage.issue4cs
dc.coverage.volume17cs
dc.rights.accessopenAccessen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen


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